Type Designator: IPP037N08N3G
Marking Code: 037N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 117 nC
trⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 1640 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220