Type Designator: SUP90N10-8M8P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 97 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 535 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO-220AB