Type Designator: STF12NK60Z
Marking Code: F12NK60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 59 nC
trⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
Package: TO220FP