Type Designator: SPA11N60C3
Marking Code: 11N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 390 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220