ype Designator: IPP034NE7N3G
Marking Code: 034NE7N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 1380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TO220