Type Designator: IRFB3207Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
Package: TO220AB